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2SK3159
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1084-0400 Rev.4.00 May 15, 2006
Features
* Low on-resistance RDS = 23 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D 1. Gate 2. Drain (Flange) 3. Source
G
1
2
3
S
Rev.4.00 May 15, 2006 page 1 of 7
2SK3159
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 150 20 50 200 50 50 187 125 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 150 20 -- -- 1.0 -- -- 27 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 23 28 45 4000 1650 590 30 280 830 450 0.95 200 Max -- -- 10 10 2.5 30 42 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 150 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 VNote4 ID = 25 A, VGS = 4 V Note4 ID = 25 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 25 A, VGS = 10 V, RL = 1.2
IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/ dt = 50 A/s
Rev.4.00 May 15, 2006 page 2 of 7
2SK3159
Main Characteristics
Power vs. Temperature Derating
160 500 200 100 50 20 10 5 2 1 0.5
1 10 0 0s 1 ms s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
PW
120
80
D C (T O c pe = 25 rati C on )
40
0 0
50
100
150
200
0.2 0.1 Ta = 25C 0.05 0.1 0.3 1
Operation in this area is limited by RDS (on)
=
10
3
10 30 100 300 1000
s m (1 ) ot Sh
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 10 V Pulse Test 4V 3.5 V 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
30
Drain Current ID (A)
40
3V
80
60
20 2.5 V 10 VGS = 2 V 0 0 2 4 6 8 10
40 Tc = 75C 25C -25C 0 0 1 2 3 4 5
20
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100 50 VGS = 4 V 20 10 5 10 V
Drain to Source Saturation Voltage VDS (on) (V)
2.0
Pulse Test
1.6 ID = 50 A 1.2
0.8 20 A 0.4 10 A
Static Drain to Source on State Resistance RDS (on) (m)
2 Pulse Test 1 1 2 5 10 20 50 100 200
0
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 May 15, 2006 page 3 of 7
2SK3159
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance yfs (S)
100 Pulse Test 80 10, 20 A 60 ID = 50 A
500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 75C VDS = 10 V Pulse Test 10 30 100 Tc = -25C 25C
40
VGS = 4 V 10, 20 A 50 A
20
10 V
0 -50
0
50
100
150
200
Case Temperature Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
30000 10000
Body to Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time trr (ns)
500
di / dt = 50 A / s VGS = 0, Ta = 25C
Capacitance C (pF)
200 100 50
Ciss 3000 1000 Coss 300 VGS = 0 f = 1 MHz 100 Crss 20 30 40 50
20 10 0.1
0.3
1
3
10
30
100
0
10
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
Drain to Source Voltage VDS (V)
200
Gate to Source Voltage VGS (V)
ID = 50 A 16 VDD = 100 V 50 V 25 V VDS
5000 2000
Switching Time t (ns)
160
1000 500 200 100 50 20 10 0.1 0.2
tf
td(off)
120
VGS
12
80
8
tr td(on) VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 %
40
0 0
VDD = 100 V 50 V 25 V 80 160 240 320
4
0 400
0.5 1
2
5
10 20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.4.00 May 15, 2006 page 4 of 7
2SK3159
Reverse Drain Current vs. Source to Drain Voltage
50
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
250 IAP = 50 A VDD = 50 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
40
200
30
10 V
150
20 5V 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 VGS = 0, -5 V
100
50
0
0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
0.02
ch - c (t) = s (t) * ch - c ch - c = 1.0C/W, Tc = 25C PDM
pu lse
D= PW T
0.03
PW T
0.0
1
1s
t ho
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS Monitor L
Avalanche Waveform EAR = 1 * L * IAP2 * 2 VDSS VDSS - VDD
V(BR)DSS VDD IAP VDS ID
IAP Monitor Rg D.U.T
Vin 15 V
50 VDD
0
Rev.4.00 May 15, 2006 page 5 of 7
2SK3159
Switching Time Test Circuit Switching Time Waveform
Vin Monitor D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
50
VDD = 30 V td(on)
90% tr
90% td(off) tf
Rev.4.00 May 15, 2006 page 6 of 7
2SK3159
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK3159-E Quantity 360 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 May 15, 2006 page 7 of 7
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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